page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures epitaxial planar die construction. complementary pnp type available(mmst5401). also available in lead free version. marking: k 4 n maximum ratings (ta=25 unless otherwise noted) p ar a met e r symbol v alue uni t col l ector - ba s e v o l t age v cbo 180 v col l ector - emitter v o l t age v ceo 160 v emitter - base v o l t a g e v ebo 6 v col l ector cur re n t - conti n u o us i c 600 m a col l ector p o w e r dissi p a t i on p c 300 m w thermal resistance junction to ambie n t r ja 625 c/w s torage t e mp e rature t stg - 55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions m in m ax u mit collector - b as e breakdo w n voltage v cbo i c =100a,i e =0 180 collector - e m itter breakd o wn volta g e v ceo i c =0.1ma,i b =0 160 emitter - base breakdo w n voltage v ebo i e =10a,i c =0 6 c ollector cut - off current i cbo i e = 0; v c b = 120v - 50 na e mitter cut - o f f current i ebo i c = 0; v eb = 4v - 50 na dc c urrent g ain h fe v c e = 5v; i c = 1ma v c e = 5v;i c = 10ma v c e = 5v;i c = 50 ma 80 80 30 - 250 - c ollector - emitter saturation voltage v ce(sat) i c = 50 ma; i b = 5 ma i c = 10 ma; i b = 1 ma - 0.2 0.15 v b ase - emitter saturation v o ltage v be(sat) i c = 50 ma; i b = 5 ma i c = 10 ma; i b = 1 ma - 1 1 v t ransition fre quency f t i c = 10ma; v c e = 10v; f = 100mhz 80 - mhz MMST5551 ( n p n ) 1. base 2. emitter sot - 323 3. collecto
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. MMST5551 typical characteristics
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